Performance‐Enhancing Gate‐Tunable Quantum‐Dot Light Emitting Diodes: Accessibility for Optical Communication and Image Encryption Applications

Abstract Quantum‐dot light‐emitting diodes (QLEDs) are attracting attention as next‐generation display devices due to their tunable spectral emission properties, superior color purity, and accessibility to solution processing. However, their efficiency is still limited by the injection and transport imbalances between electrons and holes as charge carriers. In contrast to conventional approaches focusing more on the material and interfacial engineering, including functional layer optimization, interface engineering, or doping strategies, the team designs and fabricates a three‐terminal gate‐tunable QLEDs structure that directly regulates the carrier transport process to bridge the gap between electrons and holes injection and transport, achieving an effective increase in EQE (from 8.33% to 14.98%, a 79.8% improvement) and, at the same time, reaches the maximum brightness of the device much faster than in the absence of a gate presence. Inspired by the specificity of the gate‐tunable brightness response to driving conditions dominated by the gate voltage and hardware parameters, including the thickness of the insulating layer, it is believed that this structure has great potential for applications in dual‐key optical communications and image encryption.