Alteration of quantum capacitance of 2D metal oxide semiconductor field-effect transistors under the effect of microwave fields

The dependence of quasi-Fermi levels and current–voltage characteristics of electrons and holes of two-dimensional (2D) diodes with a p-n-junction on the wavelength of light was theoretically studied. The quantum capacitance of 2D MOSFETs increases under the influence of a microwave field. The microwave field heats the electrons and holes in the channel, allowing the semiconductor to overcome the potential barrier. As a result, a direct current flows through the semiconductor.