Zero‐Field Anomalous Hall Effect in Bulk Single Crystal Mn <sub>3</sub> Ir

The L1<sub>2</sub>-phase noncollinear antiferromagnet (AFM) Mn<sub>3</sub>Ir has emerged as a pioneering platform for realizing the zero-field giant anomalous Hall effect (AHE), thereby catalyzing the rapid advancement of antiferromagnetic spintronics. Despite its significant potential, the experimental investigation of the intrinsic magnetic and electronic properties of Mn<sub>3</sub>Ir has been greatly hindered, primarily due to the formidable challenges associated with the growth of bulk single crystals. Here, the successful growth of stoichiometric Mn<sub>3</sub>Ir bulk single crystals and characterization on the magnetization and AHE is reported. The (111)-oriented hexagonal Mn<sub>3</sub>Ir single crystals are successfully obtained using a high-throughput flux method. The smaller AHE is successfully detected. Intriguing results are attributed to the coexistence of A-domain and B-domain antiferromagnetic domains mutually cancelling the AHE response. This work reveals the key details of the intrinsic magnetic properties and AHE in bulk Mn<sub>3</sub>Ir. This provides a key material for the development of advanced antiferromagnetic spintronic devices.

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Publication Details

Journal
Advanced Science
Published
2025-11-08
DOI
https://doi.org/10.1002/advs.202512559
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
0.00

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article

Zero‐Field Anomalous Hall Effect in Bulk Single Crystal Mn 3 Ir

Shijun Yuan, Jinlan Wang, Ruoqi Wang, Taishi Chen et al.
Advanced Science
Magnetic properties of thin films
article

Zero‐Field Anomalous Hall Effect in Bulk Single Crystal Mn 3 Ir

Shijun Yuan, Jinlan Wang, Ruoqi Wang, Taishi Chen, Kunquan Hong, Bo Zhao, Xin Gu, Haofu Wen
article en

Abstract

The L1<sub>2</sub>-phase noncollinear antiferromagnet (AFM) Mn<sub>3</sub>Ir has emerged as a pioneering platform for realizing the zero-field giant anomalous Hall effect (AHE), thereby catalyzing the rapid advancement of antiferromagnetic spintronics. Despite its significant potential, the experimental investigation of the intrinsic magnetic and electronic properties of Mn<sub>3</sub>Ir has been greatly hindered, primarily due to the formidable challenges associated with the growth of bulk single crystals. Here, the successful growth of stoichiometric Mn<sub>3</sub>Ir bulk single crystals and characterization on the magnetization and AHE is reported. The (111)-oriented hexagonal Mn<sub>3</sub>Ir single crystals are successfully obtained using a high-throughput flux method. The smaller AHE is successfully detected. Intriguing results are attributed to the coexistence of A-domain and B-domain antiferromagnetic domains mutually cancelling the AHE response. This work reveals the key details of the intrinsic magnetic properties and AHE in bulk Mn<sub>3</sub>Ir. This provides a key material for the development of advanced antiferromagnetic spintronic devices.

Advanced ScienceVol. 12(46)
Shanghai Advanced Research Institute (CN), Ministry of Education (BD), Intelligent Health (United Kingdom) (GB)
Salt Science Research Foundation, National Natural Science Foundation of China, Government of Jiangsu Province, Natural Science Foundation of Jiangsu Province, Nanjing University, Southeast University, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, National Supercomputing Center of Tianjin, National Supercomputing Center, Korea Institute of Science and Technology Information
Openalex Percentile: Top 73%
Magnetic properties of thin films
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