First Comprehensive 2D Thermomechanical Modeling of SiC MOSFETs Under Extreme Short-Circuit Stress

Authors

Mustafa Shqair (ORCID: https://orcid.org/0000-0002-2122-6039)
Frédéric Richardeau (ORCID: https://orcid.org/0000-0002-6964-8054)
Emmanuel Sarraute

Institutions

Laboratoire Plasma et Conversion d'Energie (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2025-10-29
Primary Topic: Silicon Carbide Semiconductor Technologies
Type: article
Field-Weighted Citation Impact: 0.00

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article

First Comprehensive 2D Thermomechanical Modeling of SiC MOSFETs Under Extreme Short-Circuit Stress

Mustafa Shqair, Frédéric Richardeau, Emmanuel Sarraute

Oct 29, 2025

SPIRE - Sciences Po Institutional REpository

Silicon Carbide Semiconductor Technologies

article

First Comprehensive 2D Thermomechanical Modeling of SiC MOSFETs Under Extreme Short-Circuit Stress

Mustafa Shqair, Frédéric Richardeau, Emmanuel Sarraute

October 29, 2025article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Laboratoire Plasma et Conversion d'Energie (FR)

Openalex Percentile: Top 67%

Silicon Carbide Semiconductor Technologies

Open Access PDF OpenAlex

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First Comprehensive 2D Thermomechanical Modeling of SiC MOSFETs Under Extreme Short-Circuit Stress — Mustafa Shqair, Frédéric Richardeau, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS