Parameters of the Modified Tantalum Oxide and Carbide Layers under Stoichiometric Sputtering with Helium Ions

This study analyzed the changes occurring on the surfaces of tantalum carbide and oxide under the influence of helium ions. A technique was employed to determine the composition and thickness of layers formed through the sputtering process of binary targets under the influence of light ions. The data obtained was utilized to calculate the thicknesses of the modified layers and their respective compositions. The results indicated that the surface layers contain a lower proportion of the lighter component compared to the original material, which aligns with experimental observations.