Anisotropic spin dynamics in the intrinsic ferromagnet <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>Fe</mml:mi> <mml:mn>3</mml:mn> </mml:msub> <mml:msub> <mml:mrow> <mml:mi>Ga</mml:mi> <mml:mi>Te</mml:
The van der Waals material ${\mathrm{Fe}}_{3}{\mathrm{Ga}\mathrm{Te}}_{2}$ (F3GaT) is a promising candidate for spintronic applications due to its high Curie temperature (${T}_{C}$) and strong perpendicular magnetic anisotropy (PMA). In this study, we thoroughly investigate the spin dynamics of F3GaT single crystals using electron spin resonance (ESR) techniques. The temperature-dependent ESR spectra reveal a significant range of magnetic fluctuations from ${T}_{C}\ensuremath{\sim}362$ K to ${T}^{\phantom{\rule{0.1em}{0ex}}\ensuremath{\ast}}\ensuremath{\sim}410$ K. Furthermore, the angle-dependent resonance field ${H}_{r}$ of the ESR demonstrates strong PMA, with the maximum ${H}_{r}$ in the $ab$ plane indicating the hard direction, while the minimum along the $c$ axis suggesting the easy orientation. Meanwhile, the angle-dependent ESR spectra reveal distinct anisotropic spin couplings. For $H//ab$, spin-spin relaxation predominates between ${T}_{C}$ and ${T}^{\phantom{\rule{0.1em}{0ex}}\ensuremath{\ast}}$, whereas spin-lattice relaxation prevails above ${T}^{\phantom{\rule{0.1em}{0ex}}\ensuremath{\ast}}$. In contrast, for $H//c$, the Korringa mechanism, arising from the interaction between localized spins and conduction electrons, dominates above ${T}_{C}$. Our findings elucidate the anisotropic spin dynamics in F3GaT, providing insights into its potential application in microwave-based spintronic devices.
Authors
- Wei Liu (ORCID: https://orcid.org/0000-0001-7126-5290)
- Min Ge (ORCID: https://orcid.org/0009-0004-7010-6764)
- Jiyu Fan (ORCID: https://orcid.org/0000-0001-6698-6384)
- Jingxin Li (ORCID: https://orcid.org/0000-0001-7370-703X)
- Chunlan Ma
- Li Pi (ORCID: https://orcid.org/0009-0004-9146-5889)
- Yang Yang (ORCID: https://orcid.org/0000-0003-1967-3398)
- Lei Zhang (ORCID: https://orcid.org/0000-0001-5427-6561)
- Jingjing Ma (ORCID: https://orcid.org/0000-0002-2548-5871)
- Xuguang Liu (ORCID: https://orcid.org/0000-0002-2057-295X)
- Zhe Qu (ORCID: https://orcid.org/0000-0003-3865-8337)
Institutions
- University of Science and Technology of China (CN)
- Anhui University (CN)
- Suzhou University of Science and Technology (CN)
- High Magnetic Field Laboratory (CN)
- Nanjing University of Aeronautics and Astronautics (CN)
Publication Details
- Journal
- Physical Review Applied
- Published
- 2025-11-07
- DOI
- https://doi.org/10.1103/4dc5-l7fx
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00