Single-event burnout mechanism in <b>β</b> -Ga2O3 Schottky barrier diodes

In this work, the single-event burnout (SEB) mechanism of β-Ga2O3 SBD is systematically investigated. The irradiation experiment was performed based on Kr ions with a high linear energy transfer of 37.9 MeV/(mg/cm2). During irradiation, the SBDs experienced burnout at applied bias voltages of 300 and 500 V, and the failure points were found at the anode edge. The TCAD simulation results show that the region outside the anode is less sensitive to irradiation. In contrast, ion incidence in the anode region leads to significant increases in electric field, current density, and temperature. Furthermore, there is a significant increase in these parameters at the anode edge compared to the anode center. Therefore, the anode edge is identified as the most sensitive region to radiation, which is consistent with the experimental results. Based on experimental and simulation results, an SEB mechanism is proposed. Heavy ion incidence will introduce a large number of electron–hole pairs, which are subsequently accelerated by the peak electric field at the anode edge. This acceleration initiates impact ionization, leading to the continuous generation of additional electron–hole pairs and resulting in a peak current at the anode edge. The current induced by the irradiation will cause significant Joule heating. When the local lattice temperature exceeds the melting temperature of β-Ga2O3 material, it gradually leads to thermal damage and triggers SEB. This paper analyzed the radiation-sensitive regions and the mechanism of SEB in β-Ga2O3 SBD, which provides a research basis for future heavy-ion irradiation hardening.