A Novel Beam-Tilt Technique in Transmission Electron Microscopy (TEM): Application for Semiconductor Use Cases

Abstract Transmission electron microscopy (TEM) and related characterization techniques are widely used to inspect semiconductor devices. Conventional TEM (CTEM) and scanning TEM (STEM) methods mostly keep the incident electron beam at a fixed angle, aligned with the optical axis of the electron microscope. While effective in many scenarios, this invariance could limit the potential for more complex applications. We investigate a technique that allows us to acquire multidimensional data from a series of beam tilt angles. The acquired data can be further processed to provide more information and to reduce the possible errors associated with single data sets. In this paper, we demonstrate the advantages of this technique through several semiconductor use cases. These benefits include reducing unwanted background information in electric field mapping on a SiC film, enhancing strain mapping quality on a Si-SiGe multilayer structure and improving grain mapping on a 3D-NAND device. This beam-tilt technique can be executed via an automated script once the experimental conditions are optimized, paving the way for large-volume investigation through automated TEM.