Giant Exciton Binding Energy in a Three-Dimensional Organic–Inorganic Hybrid Semiconductor

In a conventional three-dimensional (3D) semiconductor, exciton binding is significantly weaker than that of a low-dimensional system due to the absence of geometry confinement and strong dielectric screening. β-ZnTe(en)<sub>0.5</sub>, a 3D II-VI organic-inorganic hybrid semiconductor, with subnanometer inorganic sheets, is predicted to possess an exceptionally large exciton binding energy, orders-of-magnitude higher than that of bulk ZnTe. However, experimental validation of this prediction is elusive. This study provides the first experimental confirmation of a large <i>E</i><sub>b</sub> in β-ZnTe(en)<sub>0.5</sub> using one-photon photoluminescence to detect the exciton ground state (1<i>s</i>) and two-photon photoluminescence excitation spectroscopy to probe the 2<i>p</i>-like exciton excited state. The 1<i>s</i>-2<i>p</i> separation can be taken as the lower-bound value of <i>E</i><sub>b</sub> and further used for estimating <i>E</i><sub>b</sub> by applying a hydrogenic model. The results reveal a 1<i>s</i>-2<i>p</i> separation of 280 meV at 300 K, which yields <i>E</i><sub>b</sub> exceeding 315 meV based on a hydrogenic model, the largest among 3D structures. The large <i>E</i><sub>b</sub> in β-ZnTe(en)<sub>0.5</sub> is derived from its 2D-like electronic properties. This work experimentally confirms the giant <i>E</i><sub>b</sub> in β-ZnTe(en)<sub>0.5</sub> together with the information on the exciton excited states, thereby setting a critical benchmark for more rigorous theoretical studies and establishing a novel spectroscopic approach for investigating a large group of hybrid semiconductors.

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Journal
Journal of the American Chemical Society
Published
2025-11-06
DOI
https://doi.org/10.1021/jacs.5c15468
Primary Topic
2D Materials and Applications
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article
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article

Giant Exciton Binding Energy in a Three-Dimensional Organic–Inorganic Hybrid Semiconductor

Thomas A. Schmedake, Xue‐Lu Liu, Ping‐Heng Tan, Yong Zhang et al.
Journal of the American Chemical Society
2D Materials and Applications
article

Giant Exciton Binding Energy in a Three-Dimensional Organic–Inorganic Hybrid Semiconductor

Thomas A. Schmedake, Xue‐Lu Liu, Ping‐Heng Tan, Yong Zhang, Yizhou Wang, Rui Mei
article en

Abstract

In a conventional three-dimensional (3D) semiconductor, exciton binding is significantly weaker than that of a low-dimensional system due to the absence of geometry confinement and strong dielectric screening. β-ZnTe(en)<sub>0.5</sub>, a 3D II-VI organic-inorganic hybrid semiconductor, with subnanometer inorganic sheets, is predicted to possess an exceptionally large exciton binding energy, orders-of-magnitude higher than that of bulk ZnTe. However, experimental validation of this prediction is elusive. This study provides the first experimental confirmation of a large <i>E</i><sub>b</sub> in β-ZnTe(en)<sub>0.5</sub> using one-photon photoluminescence to detect the exciton ground state (1<i>s</i>) and two-photon photoluminescence excitation spectroscopy to probe the 2<i>p</i>-like exciton excited state. The 1<i>s</i>-2<i>p</i> separation can be taken as the lower-bound value of <i>E</i><sub>b</sub> and further used for estimating <i>E</i><sub>b</sub> by applying a hydrogenic model. The results reveal a 1<i>s</i>-2<i>p</i> separation of 280 meV at 300 K, which yields <i>E</i><sub>b</sub> exceeding 315 meV based on a hydrogenic model, the largest among 3D structures. The large <i>E</i><sub>b</sub> in β-ZnTe(en)<sub>0.5</sub> is derived from its 2D-like electronic properties. This work experimentally confirms the giant <i>E</i><sub>b</sub> in β-ZnTe(en)<sub>0.5</sub> together with the information on the exciton excited states, thereby setting a critical benchmark for more rigorous theoretical studies and establishing a novel spectroscopic approach for investigating a large group of hybrid semiconductors.

Journal of the American Chemical SocietyVol. 147(46)
University of North Carolina at Charlotte (US), Chinese Academy of Sciences (CN), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 74%
2D Materials and Applications
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