Phase‐Change VO <sub>2</sub> Enabled Optoelectronic Devices With Switching Dynamics

Abstract Phase‐change materials (PCMs) exhibit reversible structural transformations and dramatic property changes in response to external stimuli, offering unprecedented opportunities for dynamically tunable optoelectronic devices. Vanadium dioxide (VO 2 ), a prototypical correlated oxide, displays a pronounced metal‐insulator transition. Its inherent multi‐stability and reversible phase transition enable innovative applications in information storage, dynamic modulation, and operational mode switching. This review outlines strategies for developing stable reconfigurable photonic components by exploiting the VO 2 phase transition, which can be precisely induced by external stimuli (light, electrical bias, heat). This approach bridges the gap between fundamental phase‐transition mechanisms and dynamic optoelectronic performance, paving the way for functional devices that transcend the limitations of conventional static components. It first clarifies the fundamental structural features of VO 2 and the corresponding evolution of its optical and electrical parameters during phase transition. Subsequently, it summarizes advanced synthesis techniques for high‐quality VO 2 films. Furthermore, a systematic analysis of state‐of‐the‐art VO 2 ‐based optoelectronic device architectures highlights their unique switching dynamics and non‐volatile phase transition mechanisms for optical response manipulation. These comprehensive discussions aim to inspire new design paradigms for multifunctional and reconfigurable optoelectronics, providing valuable insights for the development of next‐generation adaptive optoelectronic systems.

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Publication Details

Journal
Advanced Optical Materials
Published
2025-11-06
DOI
https://doi.org/10.1002/adom.202502649
Citations
1
Primary Topic
Transition Metal Oxide Nanomaterials
Type
article
Field-Weighted Citation Impact
0.61
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Phase‐Change VO 2 Enabled Optoelectronic Devices With Switching Dynamics

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1 citations
Advanced Optical Materials
Transition Metal Oxide Nanomaterials
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article

Phase‐Change VO 2 Enabled Optoelectronic Devices With Switching Dynamics

Hao Xu, Qinhao Lin, Yanlin Wang, Xue‐Bin Wang, Jiazhen Zhang
article en
1 citations

Abstract

Abstract Phase‐change materials (PCMs) exhibit reversible structural transformations and dramatic property changes in response to external stimuli, offering unprecedented opportunities for dynamically tunable optoelectronic devices. Vanadium dioxide (VO 2 ), a prototypical correlated oxide, displays a pronounced metal‐insulator transition. Its inherent multi‐stability and reversible phase transition enable innovative applications in information storage, dynamic modulation, and operational mode switching. This review outlines strategies for developing stable reconfigurable photonic components by exploiting the VO 2 phase transition, which can be precisely induced by external stimuli (light, electrical bias, heat). This approach bridges the gap between fundamental phase‐transition mechanisms and dynamic optoelectronic performance, paving the way for functional devices that transcend the limitations of conventional static components. It first clarifies the fundamental structural features of VO 2 and the corresponding evolution of its optical and electrical parameters during phase transition. Subsequently, it summarizes advanced synthesis techniques for high‐quality VO 2 films. Furthermore, a systematic analysis of state‐of‐the‐art VO 2 ‐based optoelectronic device architectures highlights their unique switching dynamics and non‐volatile phase transition mechanisms for optical response manipulation. These comprehensive discussions aim to inspire new design paradigms for multifunctional and reconfigurable optoelectronics, providing valuable insights for the development of next‐generation adaptive optoelectronic systems.

Advanced Optical MaterialsVol. 13(36)
University of Electronic Science and Technology of China (CN), Huzhou Normal University (CN)
Openalex Percentile: Top 28%
Transition Metal Oxide Nanomaterials
0.61
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