Fabrication of shallow V<sub>Si</sub><sup>−</sup> color-center ensembles in 4H-SiC via low-energy ion implantation

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Publication Details

Journal
Chinese Science Bulletin (Chinese Version)
Published
2025-11-07
DOI
https://doi.org/10.1360/csb-2025-5407
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
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article

Fabrication of shallow VSi− color-center ensembles in 4H-SiC via low-energy ion implantation

Y. Zhao, Yuan Gao, Zheheng Wu, Shang Tian et al.
Chinese Science Bulletin (Chinese Version)
Silicon Carbide Semiconductor Technologies
article

Fabrication of shallow VSi− color-center ensembles in 4H-SiC via low-energy ion implantation

Y. Zhao, Yuan Gao, Zheheng Wu, Shang Tian, Haozheng Guo, Jianming Xue
article en

Abstract

No abstract available for this paper.
Chinese Science Bulletin (Chinese Version)Vol. 71(4)
Openalex Percentile: Top 67%
Silicon Carbide Semiconductor Technologies
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