Retention framework for analysing trapping dynamics in solution-processed metal-oxide semiconductors

Abstract The recovery lifetime postponement mechanism in solution-processed (SP) indium zinc oxide (IZO) thin-film transistors (TFTs) is analytically formulated under thermal and photo-annealing conditions. A quantitative density of states (DOS) model is employed to analyse charge transport dynamics and the impact of In molarity ratios on the retention lifetime and electrical stability. The photo-retention characteristics of IZO TFTs were examined during photo-annealing, showing that higher In molarity concentrations extend the retention lifetime. To quantify this behaviour, a recovery lifetime estimation method based on post-annealing and DOS distributions is proposed. A DOS–energy diagram describing the charge transition mechanism and its relationship with the atomic structure of SP IZO semiconductors is developed. A trade-off between the prolonged retention lifetime and recovery capability with increasing In molarity is noted. This work provides a detailed framework for understanding retention lifetime dynamics, stability, and performance of SP IZO TFTs, offering insights for their widespread application in sensor devices.