Modeling of a novel CuAgBeSnSe4/FASnI3-based perovskite solar cell with optimized device parameters

The quaternary multi-chalcogenide compound CuAgBeSnSe4 (CABTSe) has emerged as a promising light-absorbing material for photovoltaic applications due to its favorable optoelectronic properties. This study presents a novel perovskite solar cell (PSC) architecture incorporating a dual-absorber layer composed of CuAgBeSnSe4/FASnI3, where CABTSe and FASnI3 serve as the top and bottom absorbers, respectively. Comprehensive optimization of key device parameters including absorber thickness, back contact work function, operating temperature and total defect density was performed for the proposed configuration. Optimal performance was achieved using absorber layer thicknesses of 0.010 µm for CABTSe and 1 µm for FASnI3 at an operational temperature of 300 K. The proposed cell demonstrated fill factor (FF) result of 89.00894 %, open circuit voltage (Voc) of 1.22234 V, short-circuit current (Jsc) of 31.76997 mA/cm2 and maximum power conversion efficiency (PCE) of 34.56552 %. The materials used not only demonstrate superior performance but also exhibit lower toxicity compared to conventional lead-based options, thereby promoting a more sustainable method for advancing solar cell technology. The results indicate that the CABTSe/FASnI3 double-absorber structure presents considerable promise for the progression of next-generation, environmentally sustainable photovoltaic technologies.