Thermo-Electrical Digital Twin-Assisted Aging Assessment of SiC MOSFETs in Switching-Cell-Array Power Converters

Accurate aging assessment of switching power semiconductors in power converters is essential due to their critical influence on converter reliability and operational lifespan. Traditional aging evaluation methods rely on intrusive sensors embedded within the power devices, which complicate electromagnetic interference management and limit the practicality of real-time monitoring. This paper proposes a comprehensive digital-twin framework and a simple algorithm to assess the state of health (SOH) of SiC power devices in switching-cell-array based power converters. The digital twin replicates the system electro-thermal behavior from the existing converter control current and voltage measurements and the modulation parameters. The algorithm estimates the power devices on-state resistance through the digital twin outputs and easy-to-integrate temperature sensors within the converter leg printed-circuit board. The on-state resistance provides a direct estimation of the power devices SOH. This framework delivers real-time insights into the converter SOH and degradation patterns, allowing predictive maintenance strategies. The proposed health assessment strategy is validated through simulations.

Authors

Institutions

Publication Details

Published
2025-10-14
DOI
https://doi.org/10.1109/iecon58223.2025.11221420
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Thermo-Electrical Digital Twin-Assisted Aging Assessment of SiC MOSFETs in Switching-Cell-Array Power Converters

Àlber Filbà-Martínez, Sergio Busquets‐Monge, Davide Barater, Chen Liu et al.
Silicon Carbide Semiconductor Technologies
article

Thermo-Electrical Digital Twin-Assisted Aging Assessment of SiC MOSFETs in Switching-Cell-Array Power Converters

Àlber Filbà-Martínez, Sergio Busquets‐Monge, Davide Barater, Chen Liu, Jana Soler-Lazaro
article en

Abstract

Accurate aging assessment of switching power semiconductors in power converters is essential due to their critical influence on converter reliability and operational lifespan. Traditional aging evaluation methods rely on intrusive sensors embedded within the power devices, which complicate electromagnetic interference management and limit the practicality of real-time monitoring. This paper proposes a comprehensive digital-twin framework and a simple algorithm to assess the state of health (SOH) of SiC power devices in switching-cell-array based power converters. The digital twin replicates the system electro-thermal behavior from the existing converter control current and voltage measurements and the modulation parameters. The algorithm estimates the power devices on-state resistance through the digital twin outputs and easy-to-integrate temperature sensors within the converter leg printed-circuit board. The on-state resistance provides a direct estimation of the power devices SOH. This framework delivers real-time insights into the converter SOH and degradation patterns, allowing predictive maintenance strategies. The proposed health assessment strategy is validated through simulations.

University of Modena and Reggio Emilia (IT), Institut de Recerca en Energia de Catalunya (ES), Universitat Politècnica de Catalunya (ES)
European Commission, HORIZON EUROPE Framework Programme
Openalex Percentile: Top 67%
Silicon Carbide Semiconductor Technologies
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.