Microwave permittivity and loss in epitaxial SrTiO3

Materials that feature very high permittivity and very low losses at low temperatures offer interesting opportunities for improving the performance of a variety of microwave-optical devices such as phase shifters and quantum transducers. In this Letter, superconducting Al coplanar waveguide resonators between 4 and 6 GHz were used to determine the complex permittivity and loss of thin film SrTiO3 on Si at cryogenic temperatures. We report a permittivity of 1950 ± 140 and a high-power loss tangent (tan δSTO) of 3.4 ± 0.1×10−4 at millikelvin temperatures. To further investigate the potential of SrTiO3 for use in emerging quantum technology applications, the transition of tan δSTO into the single photon regime was analyzed. Our findings reveal a loss scaling that aligns closely with a two-level system loss mechanism. We observe a nearly two orders of magnitude difference in tan δSTO between high and low input power levels, consistent with that two-level system loss picture.

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Publication Details

Journal
Applied Physics Letters
Published
2025-11-03
DOI
https://doi.org/10.1063/5.0265424
Citations
1
Primary Topic
Microwave Dielectric Ceramics Synthesis
Type
article
Field-Weighted Citation Impact
0.73
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article

Microwave permittivity and loss in epitaxial SrTiO3

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1 citations
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article

Microwave permittivity and loss in epitaxial SrTiO3

Kamal Brahim, Christian Haffner, Lukas Nulens, Clément Merckling, Yishu Huang, Anton Potočnik, Joris Van de Vondel, Anja Ulrich, Kristiaan De Greve, Michiel Debaets, Erfan Mafakheri, Andries Boelen, Tsvetan Ivanov, Conglin Sun, Tom Tandecki
article en
1 citations

Abstract

Materials that feature very high permittivity and very low losses at low temperatures offer interesting opportunities for improving the performance of a variety of microwave-optical devices such as phase shifters and quantum transducers. In this Letter, superconducting Al coplanar waveguide resonators between 4 and 6 GHz were used to determine the complex permittivity and loss of thin film SrTiO3 on Si at cryogenic temperatures. We report a permittivity of 1950 ± 140 and a high-power loss tangent (tan δSTO) of 3.4 ± 0.1×10−4 at millikelvin temperatures. To further investigate the potential of SrTiO3 for use in emerging quantum technology applications, the transition of tan δSTO into the single photon regime was analyzed. Our findings reveal a loss scaling that aligns closely with a two-level system loss mechanism. We observe a nearly two orders of magnitude difference in tan δSTO between high and low input power levels, consistent with that two-level system loss picture.

Applied Physics LettersVol. 127(18)
Imec the Netherlands (NL), Ghent University (BE), KU Leuven (BE)
Openalex Percentile: Top 22%
Microwave Dielectric Ceramics Synthesis
0.73
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