Engineering Hall Resistivity Anomalies in Epitaxial SrRuO <sub>3</sub> Thin Films by Mo Doping

Magnetic transport properties are essential for probing the interaction between charge and spin dynamics. Those include the anomalous Hall effect (AHE) and topological Hall effect (THE), which are useful in the development of spintronic devices. SrRuO<sub>3</sub> (SRO) offers an ideal platform for investigating the Hall effect, induced by robust ferromagnetism, and can be further manipulated by tuning the spin-orbit-coupled band structure near the Fermi level. In this study, we investigated how Mo doping enhances Hall resistivity (ρ<sub><i>xy</i></sub>), along with the emergence and engineering of the hump anomaly in ρ<sub><i>xy</i></sub> of epitaxial SRO thin films. The tunable hump anomaly was attributed to the multi-domain AHE model based on spatial inhomogeneities and <i>k</i>-space Berry curvature. Our results present the underlying mechanism of hump formation and provide a feasible approach for enhancing the AHE of SRO films to boost the controllability of spintronic devices.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-11-06
DOI
https://doi.org/10.1021/acsami.5c14336
Primary Topic
Topological Materials and Phenomena
Type
article
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article

Engineering Hall Resistivity Anomalies in Epitaxial SrRuO 3 Thin Films by Mo Doping

Se Young Park, Jae Hyuck Jang, Se‐Hun Kwon, Woo Seok Choi et al.
ACS Applied Materials & Interfaces
Topological Materials and Phenomena
article

Engineering Hall Resistivity Anomalies in Epitaxial SrRuO 3 Thin Films by Mo Doping

Se Young Park, Jae Hyuck Jang, Se‐Hun Kwon, Woo Seok Choi, Min‐Yeong Choi, Sehwan Song, W. L. Lim, Min Chul Choi, Rahma Dhani Prasetiyawati, Sungkyun Park, Tuson Park, Suyoun Lee
article en

Abstract

Magnetic transport properties are essential for probing the interaction between charge and spin dynamics. Those include the anomalous Hall effect (AHE) and topological Hall effect (THE), which are useful in the development of spintronic devices. SrRuO<sub>3</sub> (SRO) offers an ideal platform for investigating the Hall effect, induced by robust ferromagnetism, and can be further manipulated by tuning the spin-orbit-coupled band structure near the Fermi level. In this study, we investigated how Mo doping enhances Hall resistivity (ρ<sub><i>xy</i></sub>), along with the emergence and engineering of the hump anomaly in ρ<sub><i>xy</i></sub> of epitaxial SRO thin films. The tunable hump anomaly was attributed to the multi-domain AHE model based on spatial inhomogeneities and <i>k</i>-space Berry curvature. Our results present the underlying mechanism of hump formation and provide a feasible approach for enhancing the AHE of SRO films to boost the controllability of spintronic devices.

ACS Applied Materials & InterfacesVol. 17(46)
ON Semiconductor (United States) (US), Soongsil University (KR), Enhanced Vision (United States) (US), Institut de Biologia Evolutiva (ES), Korea Basic Science Institute (KR), Pusan National University (KR), Korea Institute of Science and Technology (KR), Sungkyunkwan University (KR), Korea University of Science and Technology (KR)
Openalex Percentile: Top 74%
Topological Materials and Phenomena
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