Electrical Control of Quantum Dots in GaAs-on-Insulator Waveguides for Coherent Single-Photon Generation

The integration of coherent quantum emitters with silicon photonic platforms is essential for scalable quantum technologies. We demonstrate electrically controlled self-assembled quantum dots embedded in GaAs waveguides bonded onto a SiO₂/Si substrate and coupled to low-loss SiN waveguides. Our approach uses a die-to-die adhesive bonding process to realize a GaAs-on-insulator platform incorporating a p-i-n junction for charge noise suppression and Stark tuning of excitonic transitions. Resonance fluorescence measurements reveal narrow optical line widths below 2 μeV and high single-photon purity, with <i>g</i>⁽²⁾(0) = (5.2 ± 0.8)%, matching the performance of unprocessed GaAs devices. These results establish a practical route to integrate high-coherence quantum light sources with mature silicon photonics, enabling scalable quantum photonic integrated circuits.