Conduction Band Electronic States of Fluorine-Substituted Furan‒Phenylene Co-Oligomer Films on the Silicon and Zinc Oxide Surfaces

The results of studying the low-energy secondary electronic spectra of fluorine-substituted furan‒phenylene co-oligomer films in the energy range from 5 to 20 eV above EF are reported. Thermal vacuum deposition of films with a thickness of 8–10 nm was performed on the surface of silicon substrates and layer-by-layer deposited ZnO. The energy position of the main peaks of the density of electronic states in the conduction band of the investigated films and the properties of the potential barrier between the films and substrate surfaces was determined. The surface topography of the thin films of the fluorine-substituted furan‒phenylene co-oligomer was studied by atomic force microscopy. The films on the ZnO surface have a granular structure with a grain diameter of ~100 nm in the surface plane. Grains on the (SiO2)n-Si surface have an elongated shape, characteristic of microwhiskers.