Hybrid Integration of InGaN Lasers in a Foundry‐Fabricated Visible‐Light Photonics Platform

ABSTRACT Visible‐spectrum photonic integrated circuits (PICs) present compact, scalable solutions for quantum computing, biosensing, and virtual/augmented reality. Realizing their potential requires scalable visible‐light‐source integration methods compatible with high‐volume manufacturing and efficient optical coupling. Here, we demonstrate passive‐alignment flip‐chip bonding of 450‐nm InGaN laser diodes onto a foundry‐fabricated visible‐light silicon (Si) photonics platform with silicon nitride (SiN) waveguides, thermo‐optic devices, and photodetectors. Hybrid laser integration is realized using a sub‐micron‐precision die bonder with a vision alignment system and heatable pickup tool, allowing placement of multiple lasers on a single Si chip. Co‐design of the lasers and Si photonics, with lithographically defined alignment marks and mechanical stoppers, enables precise post‐bonding alignment. Efficient coupling to SiN waveguides is demonstrated, with a 1.1 dB minimum coupling loss. We measure 19.0 mW mean on‐chip optical power at 90 mA drive current; at 185 mA, maximum on‐chip power reaches 60.7 mW, the highest reported for hybrid‐integrated visible‐spectrum lasers, to our knowledge. A maximum wall‐plug efficiency of 7.8% is measured. An active PIC is shown, integrating a bonded laser, photodetector power monitor, and thermo‐optic switch for routing and variable attenuation. This work highlights passive‐alignment flip‐chip bonding as a practical, high‐performance approach for integrating lasers onto visible‐spectrum PICs.