Experimental analysis of Schottky-barrier 4H-SiC-detector-response to fast neutrons: Comparison with Si and diamond detectors
The response of 4H-SiC detectors to 17 MeV neutrons was experimentally analysed using detectors composed solely of carbon or silicon. The detectors were tested using three different neutron energies (14.5 MeV, 15 MeV and 17 MeV) at two different facilities with T(d,n) neutron generators, the Van de Graaff laboratory at IEAP CTU in Prague and at the DANAIDES facility at CEA research center in Cadarache. The calibration via interactions on 28 Si nuclei, the (n, α) nuclear reaction to ground and excited states of 25 Mg, was made. The standard deviation of experimental values measured by Si detector from prepared calibration curve, was of 0.073 MeV, which represents the uncertainty of less than 1% in this energy range (≈ 10 MeV). The experiment showed that the pulse height defect affects the measured spectra the way that the peak energies from the C interactions are shifted by about 0.5 MeV to higher values when the calibration from the Si interactions is used.
Authors
- Olivier Llido (ORCID: https://orcid.org/0009-0003-5163-5006)
- Bohumír Zaťko (ORCID: https://orcid.org/0000-0003-0612-6264)
- Stanislav Pospı́šil (ORCID: https://orcid.org/0000-0002-5927-7587)
- A. Lyoussi
- R. E. Mihai (ORCID: https://orcid.org/0000-0002-2809-7946)
- Mehdi Ben Mosbah (ORCID: https://orcid.org/0000-0002-0393-1180)
- C. Destouches (ORCID: https://orcid.org/0000-0002-7787-4377)
- R.E. Sykora (ORCID: https://orcid.org/0000-0003-1123-389X)
- Eva Kováčová (ORCID: https://orcid.org/0000-0002-5200-5642)
- Andrea Šagátová (ORCID: https://orcid.org/0000-0002-8519-7206)
- B. Bergmann (ORCID: https://orcid.org/0000-0002-8076-5614)
- Tomáš Slavíček
- Matej Balušík
Institutions
- Slovak University of Technology in Bratislava (SK)
- Slovak Academy of Sciences (SK)
- Horia Hulubei National Institute for R and D in Physics and Nuclear Engineering (RO)
- CEA Cadarache (FR)
- Institut de Recherche sur les Systèmes Nucléaires pour la production d'Energie bas carbone (FR)
- Czech Technical University in Prague (CZ)
Publication Details
- Journal
- EPJ Web of Conferences
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1051/epjconf/202533810016
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Slovenská Akadémia Vied
- Ministerstvo Školství, Mládeže a Tělovýchovy
- Agentúra na Podporu Výskumu a Vývoja
- Vedecká Grantová Agentúra MŠVVaŠ SR a SAV