Towards Ultra Low Thermo-Mechanical Sensitive Capacitors in CMOS

Fully integrated capacitors in CMOS with a low sensitivity to temperature and externally applied mechanical forces are crucial for highly stable, fully integrated frequency references. Thermal changes and external forces alter the physical structure of capacitors, affecting their capacitance. This paper presents measurements of the temperature dependency and mechanical stress sensitivity of several custom back-end capacitors, with a front-end capacitor for benchmarking. Onwafer and in-package measurements were conducted to (try to) separate thermal and stress effects. We show that both measured sensitivities are hardly (cor)related for backend capacitors. Thermal effects appear to be mainly related to inter-terminal oxide material whereas external force sensitivity shows a dependency on the capacitance direction and the distance from the top of the backend.

Authors

Institutions

Publication Details

Published
2025-09-08
DOI
https://doi.org/10.1109/esserc66193.2025.11214015
Primary Topic
Advanced Sensor and Energy Harvesting Materials
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Towards Ultra Low Thermo-Mechanical Sensitive Capacitors in CMOS

Anne-Johan Annema, Jos Verlinden, Nicole Wils, Thomas J. Hoen
Advanced Sensor and Energy Harvesting Materials
article

Towards Ultra Low Thermo-Mechanical Sensitive Capacitors in CMOS

Anne-Johan Annema, Jos Verlinden, Nicole Wils, Thomas J. Hoen
article en

Abstract

Fully integrated capacitors in CMOS with a low sensitivity to temperature and externally applied mechanical forces are crucial for highly stable, fully integrated frequency references. Thermal changes and external forces alter the physical structure of capacitors, affecting their capacitance. This paper presents measurements of the temperature dependency and mechanical stress sensitivity of several custom back-end capacitors, with a front-end capacitor for benchmarking. Onwafer and in-package measurements were conducted to (try to) separate thermal and stress effects. We show that both measured sensitivities are hardly (cor)related for backend capacitors. Thermal effects appear to be mainly related to inter-terminal oxide material whereas external force sensitivity shows a dependency on the capacitance direction and the distance from the top of the backend.

NXP (Netherlands) (NL), University of Twente (NL)
Openalex Percentile: Top 68%
Advanced Sensor and Energy Harvesting Materials
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Towards Ultra Low Thermo-Mechanical Sensitive Capacitors in CMOS — Anne-Johan Annema, Jos Verlinden, et al. · (2025) | TGRS Research Map | TGRS