Diamond Schottky diode arrays on large area 2 × 2 mosaic tile substrates

An array of Schottky diodes has been fabricated on an 18 mm × 18 mm (100) diamond substrate formed from a commercially available 2 × 2 mosaic tile array. The physical and electrical properties of the diodes have been measured and correlated with their location on the substrate. The I-V, C V, and RF characteristics of the diodes demonstrate excellent uniformity across the mosaic tile. • Commercially available 2 × 2 mosaic tile diamond substrates with a (100) orientation allow manufacturing of large arrays of p-type Schottky diodes. • X-ray analysis confirms excellent crystal quality across the 18 mm × 18 mm tile array. • Microwave plasma chemical vapor deposition of nominally undoped diamond achieves ~3 % uniformity in the thickness of the intrinsic epilayer with an unintentional boron doping concentration of less than 10 15 cm −3 . • Electrical measurements of the Schottky diodes show excellent uniformity of the diodes across the array regardless of their location above, or away from, the mosaic tile seams.