Spatiotemporal Plasma–Mediated Laser Fabrication of Ultrahigh‐Aspect‐Ratio Nanochannel Arrays for Vertical Perovskite Nanowire Semiconductor Devices

Abstract Laser processing technology, characterized by its operational flexibility and straightforward methodology, is increasingly being employed in the fabrication of semiconductor devices. Vertically structured semiconductor devices, owing to their unique architectural design, are attracting growing attention within the optoelectronics field. This paper combines laser processing techniques to fabricate arrays of high aspect ratio nanochannel array structures and nanowire arrays within transparent materials. Utilizing high–aspect ratio vertical nanostructures as templates, perovskite nanowires are subsequently grown within the nanochannel arrays through controlled material infiltration and crystallization processes. The resulting architectures are characterized for optoelectronic functionalities, including photoluminescent laser and photodetector performance. Under 1030 nm two‐photon excitation at 5.98 mJ cm −2 , the nanowire arrays exhibited laser emission at 785 nm with a narrow 0.92 nm bandwidth. In parallel, a vertical photodetector architecture incorporating internal perovskite nanowire arrays demonstrated a photocurrent response of 162 nA. These results demonstrate the effectiveness of laser‐fabricated nanochannel templates in producing vertically integrated nanowire semiconductor devices. The approach shows broad applicability for fabricating optoelectronic structures within transparent materials. In addition, the ability to tailor nanostructure geometry through controlled laser processing enables versatile modification of morphology and supports the direct formation of 3D photonic architectures.