Lorentzian Switching Dynamics in HZO-Based FeMEMS Synapses for Neuromorphic Weight Storage

, realizing single-device analogue multiplication during readout. The switching-threshold distribution follows a Lorentzian form, and the median threshold obeys a Merz-type field-time law. Using this framework, we demonstrate ∼200 electromechanical weight levels. We further show representative retention and endurance, establishing a compact FeMEMS synaptic weight element for calibration-aware electromechanical multiplication in neuromorphic hardware.

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Publication Details

Journal
Nano Letters
Published
2026-04-16
DOI
https://doi.org/10.1021/acs.nanolett.5c06290
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Lorentzian Switching Dynamics in HZO-Based FeMEMS Synapses for Neuromorphic Weight Storage

Shubham Jadhav, Luis R. Amaro, Madhav Ramesh, Amit Lal et al.
Nano Letters
Ferroelectric and Negative Capacitance Devices
article

Lorentzian Switching Dynamics in HZO-Based FeMEMS Synapses for Neuromorphic Weight Storage

Shubham Jadhav, Luis R. Amaro, Madhav Ramesh, Amit Lal, Thejas Basavarajappa
article en

Abstract

, realizing single-device analogue multiplication during readout. The switching-threshold distribution follows a Lorentzian form, and the median threshold obeys a Merz-type field-time law. Using this framework, we demonstrate ∼200 electromechanical weight levels. We further show representative retention and endurance, establishing a compact FeMEMS synaptic weight element for calibration-aware electromechanical multiplication in neuromorphic hardware.

Nano LettersVol. 26(16)
Cornell University (US)
National Science Foundation, Defense Advanced Research Projects Agency, Defense Sciences Office, DARPA
Openalex Percentile: Top 100%
Ferroelectric and Negative Capacitance Devices
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