Lorentzian Switching Dynamics in HZO-Based FeMEMS Synapses for Neuromorphic Weight Storage
, realizing single-device analogue multiplication during readout. The switching-threshold distribution follows a Lorentzian form, and the median threshold obeys a Merz-type field-time law. Using this framework, we demonstrate ∼200 electromechanical weight levels. We further show representative retention and endurance, establishing a compact FeMEMS synaptic weight element for calibration-aware electromechanical multiplication in neuromorphic hardware.
Authors
- Shubham Jadhav (ORCID: https://orcid.org/0000-0003-3114-4544)
- Luis R. Amaro
- Madhav Ramesh (ORCID: https://orcid.org/0000-0003-0396-561X)
- Amit Lal (ORCID: https://orcid.org/0000-0001-5090-3302)
- Thejas Basavarajappa
Institutions
- Cornell University (US)
Publication Details
- Journal
- Nano Letters
- Published
- 2026-04-16
- DOI
- https://doi.org/10.1021/acs.nanolett.5c06290
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science Foundation
- Defense Advanced Research Projects Agency
- Defense Sciences Office, DARPA