An ultra-thin InO interlayer as an oxygen reservoir for defect passivation and enhanced ferroelectricity in hafnia devices
An ultrathin InO interlayer supplies oxygen to HZO, curing the interface and thinning the dead layer, enabling more uniform ferroelectric switching with lower leakage and improved reliability.
Authors
- Jinho Ahn (ORCID: https://orcid.org/0000-0001-8271-5998)
- Sanghun Jeon (ORCID: https://orcid.org/0000-0002-4222-1587)
- Junghyeon Hwang (ORCID: https://orcid.org/0000-0002-2026-2097)
- Chaeheon Kim (ORCID: https://orcid.org/0009-0004-2320-5778)
Institutions
- Korea Advanced Institute of Science and Technology (KR)
- Hanyang University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02606g
- Citations
- 2
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46