Investigating silicon substrate loaded 2D GeSe films with excellent optoelectronic performance

Two-dimensional germanium selenium (GeSe) has attracted much attention due to its outstanding light response characteristics, which are of great significance to the semiconductor industry and the development of advanced optoelectronic equipment. In this study, we successfully deposited GeSe films on ceramic, SiO 2 /Si and glass slide substrates by using the physical vapor deposition (PVD) method. These films were comprehensively characterized to evaluate their microstructure, crystal morphology and chemical composition. Compared with ceramic and glass slide substrates, GeSe nanowires prepared on SiO 2 /Si substrates exhibit higher crystallinity, more uniform diameters and better structural consistency. In addition, the photoelectric performance test results show that GeSe nanowires have high sensitivity (28.28), fast response time (14 ms), and short recovery time (43 ms) at a wavelength of 880 nm, significantly highlighting their application potential in the field of high-performance photoelectric detection. This research not only provides a more sophisticated technical means for the preparation of GeSe films, but also offers valuable references for optimizing their photoelectric properties to adapt to future technological applications. Schematic diagram of the PVD process for synthesizing various GeSe film samples. Principle of preparing GeSe thin film photodetectors with different substrates.