Atomic cluster expansion potential for the Si-H system

The silicon-hydrogen system is of key interest for solar-cell devices, including both crystalline and amorphous modifications. Elemental amorphous Si is now well understood, but the atomic-scale effects of hydrogenating the silicon matrix remain to be fully explored. Here, we present a machine-learned interatomic potential model based on the atomic cluster expansion (ACE) framework that can describe a wide range of Si-H phases, from crystalline and amorphous bulk structures to surfaces and molecules. We perform numerical and physical validation across a range of hydrogen concentrations and compare our results to experimental findings. Our work constitutes an advancement toward the exploration of large structural models of <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"> <a:mi>a</a:mi> </a:math> -Si:H at realistic device scales.

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Publication Details

Journal
Physical Review Materials
Published
2026-04-21
DOI
https://doi.org/10.1103/891y-wm1f
Citations
1
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
12.79

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article

Atomic cluster expansion potential for the Si-H system

Volker L. Deringer, Louise A. M. Rosset
1 citations
Physical Review Materials
Thin-Film Transistor Technologies
12.79
article

Atomic cluster expansion potential for the Si-H system

Volker L. Deringer, Louise A. M. Rosset
article en
1 citations

Abstract

The silicon-hydrogen system is of key interest for solar-cell devices, including both crystalline and amorphous modifications. Elemental amorphous Si is now well understood, but the atomic-scale effects of hydrogenating the silicon matrix remain to be fully explored. Here, we present a machine-learned interatomic potential model based on the atomic cluster expansion (ACE) framework that can describe a wide range of Si-H phases, from crystalline and amorphous bulk structures to surfaces and molecules. We perform numerical and physical validation across a range of hydrogen concentrations and compare our results to experimental findings. Our work constitutes an advancement toward the exploration of large structural models of <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"> <a:mi>a</a:mi> </a:math> -Si:H at realistic device scales.

Physical Review MaterialsVol. 10(4)
University of Oxford (GB)
UK Research and Innovation, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 5%
Thin-Film Transistor Technologies
12.79
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