Atomic cluster expansion potential for the Si-H system
The silicon-hydrogen system is of key interest for solar-cell devices, including both crystalline and amorphous modifications. Elemental amorphous Si is now well understood, but the atomic-scale effects of hydrogenating the silicon matrix remain to be fully explored. Here, we present a machine-learned interatomic potential model based on the atomic cluster expansion (ACE) framework that can describe a wide range of Si-H phases, from crystalline and amorphous bulk structures to surfaces and molecules. We perform numerical and physical validation across a range of hydrogen concentrations and compare our results to experimental findings. Our work constitutes an advancement toward the exploration of large structural models of <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"> <a:mi>a</a:mi> </a:math> -Si:H at realistic device scales.
Authors
- Volker L. Deringer (ORCID: https://orcid.org/0000-0001-6873-0278)
- Louise A. M. Rosset (ORCID: https://orcid.org/0009-0005-1383-4367)
Institutions
- University of Oxford (GB)
Publication Details
- Journal
- Physical Review Materials
- Published
- 2026-04-21
- DOI
- https://doi.org/10.1103/891y-wm1f
- Citations
- 1
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 12.79
Funders
- UK Research and Innovation
- Engineering and Physical Sciences Research Council