Investigation on fabrication and physical mechanisms of single-contact AC-driven nano-LED devices
Nano-light-emitting diodes (NLEDs) have attracted considerable attention due to their unique advantages and significant potential for emerging near-eye display technologies. Nevertheless, progress in NLED applications is slowed down by challenges, including complex fabrication procedures and complicated driving schemes. In this study, single-contact nano-LED (SC-NLED) utilizing alternating current (AC) driven technology was proposed and demonstrated. In comparison, SC-NLED markedly simplifies the fabrication process by a single alignment-free photolithography step while maintaining good device performance. We conducted a detailed analysis of the electro-optical characteristics of SC-NLED and developed a physical model to describe its operational behavior, thereby elucidating the fundamental mechanisms at different operational stages. Furthermore, the mechanisms and characteristics associated with luminescence modulation in SC-NLED were investigated, and several strategies for efficiency enhancement were proposed. This research provides a theoretical and practical prototype for SC-NLED display applications, thereby paving the way toward NLED-based display technologies.
Authors
- Ting Zhi (ORCID: https://orcid.org/0009-0005-6393-3259)
- Zhe Zhuang (ORCID: https://orcid.org/0000-0002-2565-5500)
- Zili Xie
- Dongqi Zhang (ORCID: https://orcid.org/0000-0001-8484-7046)
- Rongrong Dou (ORCID: https://orcid.org/0000-0002-2807-4031)
- Feifan Xu (ORCID: https://orcid.org/0000-0003-3024-3401)
- Tao Tao (ORCID: https://orcid.org/0000-0001-8601-8583)
- Bin Liu (ORCID: https://orcid.org/0000-0002-9495-6809)
- Junchi Yu (ORCID: https://orcid.org/0009-0005-7958-8445)
- Jinpeng Huang (ORCID: https://orcid.org/0009-0004-7633-9825)
Institutions
- Nanjing University of Information Science and Technology (CN)
- Nanjing University of Science and Technology (CN)
- Nanjing University of Posts and Telecommunications (CN)
- Suzhou Vocational University (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-11-03
- DOI
- https://doi.org/10.1063/5.0292605
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26