Significant Photocurrent Enhancement through Carrier Tuning in Ta-Substituted WSe <sub>2</sub> Single Crystal
The optical characteristics of TaxW1–xSe2 semimetal nanosheets were investigated, revealing a 6-fold enhancement of photocurrent responsivity (R) with only 0.6% Ta substitution. This enhancement is attributed to hole doping from Ta replacing W in p-type WSe2, consistent with the conductivity ratio observed in the nanosheets. The photocurrent scales linearly with light intensity, and a maximum photoresponsivity of 864.8 A/W at 4 V was achieved for Ta0.006W0.994Se2, exceeding most reported values for two-dimensional transition metal dichalcogenides without artificial treatments.
Authors
- Yao Cheng (ORCID: https://orcid.org/0000-0003-1179-2886)
- Ruei‐San Chen (ORCID: https://orcid.org/0000-0003-0042-2521)
- Fan-Hsuan Kuo
- Ankush Saxena (ORCID: https://orcid.org/0000-0001-9613-6014)
- Mitch M. C. Chou (ORCID: https://orcid.org/0000-0003-0113-7191)
- Ying‐Ju Chen (ORCID: https://orcid.org/0000-0002-6444-6859)
- Shiu‐Ming Huang (ORCID: https://orcid.org/0000-0002-0085-1353)
- Pin-Cing Wang (ORCID: https://orcid.org/0000-0001-5162-7370)
Institutions
- National Sun Yat-sen University (TW)
- National Taiwan University of Science and Technology (TW)
- Optoelectronica-2001 (Romania) (RO)
- Integrated Optoelectronics (Norway) (NO)
- National Cheng Kung University (TW)
Publication Details
- Journal
- ACS Applied Energy Materials
- Published
- 2025-11-04
- DOI
- https://doi.org/10.1021/acsaem.5c02542
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00