Influence of screw dislocations on stacking order in graphite

This work examines how screw dislocations disrupt ideal stacking in graphenic materials, using a machine learning interatomic potential to model screw dislocation dipoles within different periodic cells. A novel tool is developed to assess local interlayer registration to quantify and visualise regions exhibiting stacking order. Using molecular dynamics simulations, we demonstrate that single screws exhibit greater stability in rhombohedral stacking compared to AA stacking, whereas double screws exhibit greater stability in Bernal AB stacking. The investigation reveals several mechanisms through which the ideal stacking configuration is achieved despite the presence of screw dislocations, including shearing, bond length distortion, and buckling. Furthermore, an upper threshold for the density of screw dislocations is calculated, beyond which ideal stacking cannot be realised, potentially offering an explanation for certain forms of turbostratic carbon. The findings also indicate that single screw dislocations hinder Bernal AB stacking in graphite, whereas double screw dislocations support Bernal stacking, which is significant for understanding the formation processes of graphite. • Single screws are stable in ABC graphite, double screws stable in AB graphite. • Above critical screw density graphite becomes buckled, turbostratic. • New code quantifies stacking registration quality and type in graphenic materials. • Machine-learning interatomic potentials benchmarked for stacking in graphite.

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Publication Details

Journal
Carbon
Published
2025-10-28
DOI
https://doi.org/10.1016/j.carbon.2025.120995
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.00

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article

Influence of screw dislocations on stacking order in graphite

Colin Bousige, Chris Ewels, Jacob W. Martin, Nigel A. Marks et al.
Carbon
Graphene research and applications
article

Influence of screw dislocations on stacking order in graphite

Colin Bousige, Chris Ewels, Jacob W. Martin, Nigel A. Marks, Irene Suarez‐Martinez, Gabriel R Francas, Anouar-Akacha Delenda
article en

Abstract

This work examines how screw dislocations disrupt ideal stacking in graphenic materials, using a machine learning interatomic potential to model screw dislocation dipoles within different periodic cells. A novel tool is developed to assess local interlayer registration to quantify and visualise regions exhibiting stacking order. Using molecular dynamics simulations, we demonstrate that single screws exhibit greater stability in rhombohedral stacking compared to AA stacking, whereas double screws exhibit greater stability in Bernal AB stacking. The investigation reveals several mechanisms through which the ideal stacking configuration is achieved despite the presence of screw dislocations, including shearing, bond length distortion, and buckling. Furthermore, an upper threshold for the density of screw dislocations is calculated, beyond which ideal stacking cannot be realised, potentially offering an explanation for certain forms of turbostratic carbon. The findings also indicate that single screw dislocations hinder Bernal AB stacking in graphite, whereas double screw dislocations support Bernal stacking, which is significant for understanding the formation processes of graphite. • Single screws are stable in ABC graphite, double screws stable in AB graphite. • Above critical screw density graphite becomes buckled, turbostratic. • New code quantifies stacking registration quality and type in graphenic materials. • Machine-learning interatomic potentials benchmarked for stacking in graphite.

CarbonVol. 247
Université Claude Bernard Lyon 1 (FR), Centre National de la Recherche Scientifique (FR), Curtin University (AU), Institut des Matériaux Jean Rouxel (FR), Laboratoire des Multimatériaux et Interfaces (FR), Nantes Université (FR)
Australian Government, Agence Nationale de la Recherche, Ministère de l'Europe et des Affaires Étrangères, Government of Western Australia
Openalex Percentile: Top 74%
Graphene research and applications
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