Intrinsic physical properties of flexible van der Waals semiconductor InSe
By a tailored floating zone method, we successfully overcome thermodynamic challenges to obtain pure-phase InSe crystals for the first time. Our InSe closely approaches the intrinsic limit, establishing it as a benchmark material for future studies.
Authors
- Bo B. Iversen (ORCID: https://orcid.org/0000-0002-4632-1024)
- Yong Chen (ORCID: https://orcid.org/0000-0002-8187-6172)
- Khuong Kim Huynh
- Jacob Svane (ORCID: https://orcid.org/0009-0003-5985-4860)
Institutions
- Aarhus University (DK)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-04
- DOI
- https://doi.org/10.1039/d5tc03020j
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00