Three‐Terminal Memristor with Tunable Volatility and Set Voltage

Abstract Brain‐inspired computing solutions require a suitable hardware platform, where complex operations can be realized at low power consumption. Ideally, the hardware can be reconfigured between multiple functionalities by tuning the corresponding device parameters. In this work, a three‐terminal silver–tin alloyed memristor is demonstrated, where the resistive switching characteristics can be modulated by the gate voltage. The polarity of the gate voltage determines the volatility of the device. Positive gate voltages result in primarily nonvolatile switching, while negative gate voltages facilitate primarily volatile switching. In addition, the set voltage and low resistance state can be adjusted by the magnitude of gate voltage both in the volatile and nonvolatile regimes. The dimensions of the active switching volume are 40 nm × 6 nm × 10 nm, making the design one of the most compact three‐terminal memristor. Such an ultrasmall, versatile memristive device represents a viable candidate for reconfigurable, neuromorphic hardware, where the basic building blocks can be conveniently customized to perform either synaptic or neural operations.