Analysis of continuous mode class-B/J efficiency model for broadband rectifier

Abstract This paper presents a broadband rectifier based on GaN high electron mobility transistor (HEMT). The continuous class-B/J rectifier operation mode is analyzed in detail. The relationship between the continuous mode class-B/J rectification efficiency and the output capacitance C out and the on-state resistance Ron is built and the rectification model is firstly presented. Then, the available impedance design space can be determined based on the rectification efficiency model. Considering the package parameters of the CGH40010F, design space at the package plane has been presented. Moreover, a broadband phase tuning network (PTN) is adjusted to satisfy this impedance space. Thus, a broadband transistor-based rectifier can be designed using the continuous class-B/J mode and the PTN. For validation, a rectifier working in 2.4–3.3 GHz was fabricated using CGH40010F. The rectification efficiency varies from 66% to 78% when RF input power is 10 W. Compared with other transistor-based rectifiers, the presented rectifier has a competitive working bandwidth.