Analytical Design and Numerical Simulation of MEMS Piezoresistive Pressure Sensors with Stacked SiC and SiO2 Diaphragms for Realizing Enhanced Reliable Performance before Fabrication Forecasting Critical Performance Metrics in Resistant Environmental

Traditional pressure sensors use a single diaphragm that deforms under pressure, altering the piezoresistor resistance to measure pressure. By stacking multiple diaphragms, our sensor design achieves better control of diaphragm movement, significantly enhancing performance and measurement precision. This research introduces MEMS piezoresistive pressure sensors with stacked diaphragms made of Silicon Carbide (SiC) and Silicon Dioxide (SiO 2 ). SiC provides high temperature tolerance, mechanical strength and chemical resistance, while SiO 2 offers excellent insulating properties and thermal stability. This combination ensures reliable performance and precise pressure measurements in demanding environments. This paper focuses on a MEMS pressure sensor with clamped-edge rectangular stacked diaphragms, optimized for harsh environments and high-pressure measurement over a range of 0–40[Formula: see text]MPa. Analytical modeling and numerical simulation were used to design and analyze the sensor’s characteristics. Sensor key performance parameters, i.e, sensitivity and linearity, were derived and evaluated for the clamped edge rectangular diaphragm configuration. MATLAB is used to carry out numerical simulations following the thin plate and small deflection theories to evaluate sensitivity. Numerical models are validated through Finite Element Analysis (FEA) using COMSOL Multiphysics. Comparison of simulated results with the literature data demonstrates significant improvements in sensor sensitivity of 3.4[Formula: see text]mV/V/MPa.