Study of the Multilayer Growth of Polysilicon Layers for Controlling the Deformation of Silicon Structures in the Chemical Vapor Transport Technology

Silicon structures with dielectric insulation, silicon-on-insulator structures, and group-III nitride compounds on silicon (AlN/Si, GaN/Si, etc.) are most often used in high-power electronics. One of the challenges in producing such structures is complex deformation (bending or warping) of the structures resulting from the use of a relatively thick layer of polysilicon as a support structure for the single-crystal silicon regions. The work investigates the dependence of the mechanical properties of polysilicon layers on the growth temperature during their deposition by the chemical vapor transport method. The dependence of the properties of polysilicon on the composition and ratio of gas reagents in the deposition process is shown. For chloride and bromide atmospheres, the optimal ranges of operating temperatures and operating ratios of chlorine and bromine in the gas environment are established. It is revealed that the main technological parameter determining the bending of silicon structures and its direction is the growth temperature of the polysilicon layer. The results of groove filling in silicon structures with dielectric insulation during formation of the support layer are presented. The obtained results have practical significance for the technology of creating semiconductor devices for high-power electronics.