Investigation of the Compact Thermal Modeling of SiC-Based Power MOSFETs
This paper discusses the advantages offered by a circuit-based approach in performing electrothermal simulations of multicellular power MOSFETs. It is shown that the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I-V$</tex> characteristics and the bias-dependent average temperature in the power dissipation region(s) can be determined with high accuracy in a negligible CPU time. It is also found that the results are almost insensitive to the choice of the heat source(s) model under steady-state conditions.
Authors
- Lorenzo Codecasa (ORCID: https://orcid.org/0000-0002-2851-3698)
- Vincenzo d’Alessandro (ORCID: https://orcid.org/0000-0003-1426-371X)
- Michele Riccio (ORCID: https://orcid.org/0000-0002-5926-4911)
- Andrea Irace (ORCID: https://orcid.org/0000-0003-1400-8380)
- Antonio Pio Catalano (ORCID: https://orcid.org/0000-0002-3943-3159)
- G. Romano (ORCID: https://orcid.org/0000-0002-6064-4348)
Institutions
- Allgemeine Gewerbeschule Basel (CH)
- University of Naples Federico II (IT)
- Politecnico di Milano (IT)
Publication Details
- Published
- 2025-09-24
- DOI
- https://doi.org/10.1109/therminic65879.2025.11216906
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00