150-GHz 28-nm CMOS Reflection-Type Phase Shifter Design Suitable for Low-Q Varactor
This paper presents the design and implementation of a D-band CMOS phase shifter based on a parallel reflective-load topology. Two phase-shifting architectures are explored, namely a 360° continuously tunable phase shifter and a 180° phase shifter combined with a phase inverter, enabling full 360° phase coverage. The circuit was simplified, and the number of bias lines was minimized to facilitate future array circuit implementation. In addition, a serial peripheral interface (SPI) circuit is implemented to simplify bias control and reduce the number of external connections during array chip packaging.
Authors
- Y.‐S. Kim (ORCID: https://orcid.org/0009-0008-4224-6590)
- Junghyun Lee
- Moonil Kim (ORCID: https://orcid.org/0000-0003-3090-1777)
Institutions
- Korea University (KR)
Publication Details
- Journal
- Electronics
- Published
- 2025-10-31
- DOI
- https://doi.org/10.3390/electronics14214280
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- IC Design Education Center
- Ministry of Science and ICT, South Korea
- Institute for Information and Communications Technology Promotion