High-Frequency Modulation Characteristics Based on HfZrO Ferroelectric
This work investigates the application of HfZrO ferroelectric material for the tuning of high-frequency bandpass filters. By integrating HfZrO with a two-dimensional HfSe semiconductor to form a heterostructure, the device achieves wideband tunability with low power requirements. Under a bias of ±4 V, the bandpass filter demonstrates a 3.4 GHz tuning range—from 7.8 GHz to 11.2 GHz—corresponding to a fractional tunability of approximately 43% in the X-band. The insertion loss remains below −1.8 dB across the tuning window, indicating low-loss operation. These results highlight the potential of the HfZrO/HfSe heterostructure as a promising platform for energy-efficient, CMOS-compatible, high-frequency tunable devices.
Authors
- J. Wang
- Kexiang Wang (ORCID: https://orcid.org/0009-0006-2749-1868)
- Yun Wen (ORCID: https://orcid.org/0000-0003-1446-1003)
- Ran Jiang (ORCID: https://orcid.org/0000-0001-5465-4008)
- Jie Lü (ORCID: https://orcid.org/0000-0003-3659-1175)
- J. Zhou
- Wenqing Xu (ORCID: https://orcid.org/0000-0002-2884-3101)
- Haoyu Li (ORCID: https://orcid.org/0000-0002-0275-4944)
- Meng Yu (ORCID: https://orcid.org/0000-0002-8669-0043)
- Xinyu Cao (ORCID: https://orcid.org/0000-0002-9686-2320)
- Zeyang Xiang
Institutions
- Ningbo University (CN)
- Hangzhou Wanxiang Polytechnic (CN)
- Qingdao Center of Resource Chemistry and New Materials (CN)
Publication Details
- Journal
- Inorganics
- Published
- 2025-10-31
- DOI
- https://doi.org/10.3390/inorganics13110363
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ningbo University
- Natural Science Foundation of Ningbo