Photogating Regimes in Graphene: Memory-Bearing and Reset-Free Operation

We demonstrate photogating in a graphene/Si-SiO₂ stack, where vertical motion of photogenerated charge is converted into a corresponding change in graphene channel conductance in real time. Under pulsed illumination, holes accumulate at the Si/SiO₂ interface, creating a surface photovoltage that shifts the flat-band condition and electrostatically suppresses graphene conductance. A dual-readout scheme-simultaneously tracking interfacial charging dynamics and the graphene channel-cleanly separates optical charge injection (cause) from electronic transduction (effect). This separation allows for the direct extraction of practical figures of merit without conventional transfer sweeps, including flat-band shift per pulse, retention time constants, and trap occupancy. Interface kinetics then define two operating regimes: a fast, resettable detector when traps are sparse or rapid, and a trap-assisted analog-memory state when slow traps retain charge between pulses. The mechanism is complementary metal-oxide-semiconductor compatible (CMOS-compatible) and needs no cryogenics or exotic materials. Together, these results outline a compact route to engineer integrating photodetectors, pixel-level memory for adaptive imaging, and neuromorphic optoelectronic elements that couple sensing with in situ computation.