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In 2 Se 3 ‐based ferroelectric artificial neurons with a multi‐terminal electrode architecture have been developed to directly encode and process spatiotemporal signals at the device level. The resistive response of the In 2 Se 3 ferroelectric memristor is harnessed for spatiotemporal‐specific neuronal behavior by engineering inherent in‐plane ferroelectricity and exploiting the broad regulation capability of a coplanar multi‐electrode configuration, enabling adaptable on‐device information processing and culminating in a speech recognition proof‐of‐concept with accuracy approaching 100%. These results demonstrate the device's promise as a compact, energy‐efficient building block for future on‐chip neuromorphic studies. image