An overview of PbS semiconductor quantum dot-based sensors

With the extensive application of sensor technology in industrial, medical, environmental monitoring and other fields, traditional sensors are difficult to meet the requirements in terms of sensitivity, response speed and other aspects due to material limitations. Therefore, the development of new sensor technology has become an urgent task. Quantum Dots (QDs), as Zero-Dimensional (0D) nano-semiconductor materials, demonstrate significant potential in sensing applications due to their unique properties, including the quantum confinement effect. Among them, PbS Semiconductor Quantum Dots (PbS QDs) exhibit particularly outstanding performance. This paper focuses on PbS QD-based sensors. Based on their characteristics, such as quantum confinement and high specific surface area, it systematically elaborates on preparation methods and performance advantages. Combining application cases across multiple domains, it analyzes the principles and progress of PbS QDs in biosensors, photoelectric sensors, and others. Although PbS quantum dots offer numerous advantages in sensors, they suffer from drawbacks such as poor environmental stability and lattice mismatch in heterojunctions. Future research can address these issues through strategies like core-shell structure design and hybridization with two-dimensional materials. It reveals technical challenges, forecasts industrialization directions, and highlights their potential to break through traditional bottlenecks and enhance detection performance.