Scalable Thermal Characterization and Stress Type Comparison on 55nm SiGe HBT
In this paper, the thermal behaviour of 55 nm SiGe HBT is investigated. A thermal network is implemented to represent heat dissipation through the device. DC and AC measurements are performed to extract the associated parameters compatible with HICUM_L2 compact model. Afterwards, DC and pulsed stresses are performed and compared for different bias conditions and different frequencies.
Authors
- C. Mukherjee (ORCID: https://orcid.org/0000-0002-8206-2779)
- F. Cacho
- Lucas Réveil
- Magali De Matos (ORCID: https://orcid.org/0000-0001-7428-3435)
- Cristell Maneux (ORCID: https://orcid.org/0000-0001-9125-5372)
- Arthur Sarafinof
Institutions
- Université de Bordeaux (FR)
- STMicroelectronics (France) (FR)
- Institut Polytechnique de Bordeaux (FR)
Publication Details
- Published
- 2025-10-12
- DOI
- https://doi.org/10.1109/bcicts63111.2025.11211184
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00