From Classical Ferroelectricity to Emerging Low‐Dimensional Phases

Abstract Ferroelectric materials have historically enabled breakthroughs in a wide range of technologies due to their intrinsic spontaneous polarization and electrically switchable states. While classical oxide perovskites, such as BaTiO 3 and Pb(Zr,Ti)O 3 laid the foundational understanding of ferroelectric phenomena, recent years have witnessed remarkable progress with the discovery of novel classes of ferroelectrics, including hybrid organic–inorganic perovskites, binary oxides such as HfO 2 , and 2D mono and dichalcogenide materials. These emerging low‐dimensional ferroelectrics not only extend the fundamental understanding of polar phenomena but also promise revolutionary device applications in nanoelectronics, photovoltaics, and quantum technologies. This review provides a comprehensive overview, starting from classical polarization mechanisms rooted in phonon instabilities and lattice distortions, and progresses to recently identified ferroelectric phenomena in materials like doped HfO 2 and 2D van der Waals crystals In 2 Se, (Sn,Ge)(S,Se), and (Mo,W,Ta)(S,Se) 2 . Special attention is given to novel polarization switching mechanisms, domain‐wall dynamics, and the coupling between ferroelectricity, topology, and valley physics. The implications of quantum confinement, reduced dimensionality, and structural metastability in these emerging systems are discussed in detail, outlining how these unique properties open new frontiers for future ferroelectric research and technology development.

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Publication Details

Journal
Advanced Physics Research
Published
2025-10-31
DOI
https://doi.org/10.1002/apxr.202500107
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

From Classical Ferroelectricity to Emerging Low‐Dimensional Phases

Dana Georgeta Popescu, Marius Adrian Huşanu
Advanced Physics Research
Ferroelectric and Negative Capacitance Devices
article

From Classical Ferroelectricity to Emerging Low‐Dimensional Phases

Dana Georgeta Popescu, Marius Adrian Huşanu
article en

Abstract

Abstract Ferroelectric materials have historically enabled breakthroughs in a wide range of technologies due to their intrinsic spontaneous polarization and electrically switchable states. While classical oxide perovskites, such as BaTiO 3 and Pb(Zr,Ti)O 3 laid the foundational understanding of ferroelectric phenomena, recent years have witnessed remarkable progress with the discovery of novel classes of ferroelectrics, including hybrid organic–inorganic perovskites, binary oxides such as HfO 2 , and 2D mono and dichalcogenide materials. These emerging low‐dimensional ferroelectrics not only extend the fundamental understanding of polar phenomena but also promise revolutionary device applications in nanoelectronics, photovoltaics, and quantum technologies. This review provides a comprehensive overview, starting from classical polarization mechanisms rooted in phonon instabilities and lattice distortions, and progresses to recently identified ferroelectric phenomena in materials like doped HfO 2 and 2D van der Waals crystals In 2 Se, (Sn,Ge)(S,Se), and (Mo,W,Ta)(S,Se) 2 . Special attention is given to novel polarization switching mechanisms, domain‐wall dynamics, and the coupling between ferroelectricity, topology, and valley physics. The implications of quantum confinement, reduced dimensionality, and structural metastability in these emerging systems are discussed in detail, outlining how these unique properties open new frontiers for future ferroelectric research and technology development.

Advanced Physics ResearchVol. 4(11)
National Institute of Materials Physics (RO)
Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii
Openalex Percentile: Top 68%
Ferroelectric and Negative Capacitance Devices
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From Classical Ferroelectricity to Emerging Low‐Dimensional Phases — Dana Georgeta Popescu, Marius Adrian Huşanu · Advanced Physics Research (2025) | TGRS Research Map | TGRS