Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga <sub>2</sub> O <sub>3</sub> on Al <sub>2</sub> O <sub>3</sub> (0001) and GaN (0001) Substrates

We present an analysis of the phase stabilization of β-Ga<sub>2</sub>O<sub>3</sub> and κ-Ga<sub>2</sub>O<sub>3</sub> grown by metal-organic vapor-phase epitaxy with varying supersaturation of the gas-phase precursors on c-sapphire and GaN substrates. We compare in-depth structural analyses of the bulk and interface layers, also through the measurement of strain relaxation across the structure, with a comprehensive nucleation model, based on multiscale simulations. A coherent and quantitative interpretation of different stages of the nucleation of Ga<sub>2</sub>O<sub>3</sub> phases on sapphire is elaborated on, highlighting the crucial role of the supersaturation of gas precursors and of the residual misfit strain within the initial layers in the stabilization of competing Ga<sub>2</sub>O<sub>3</sub> polymorphs.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-10-31
DOI
https://doi.org/10.1021/acsami.5c13401
Citations
1
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.43
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article

Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga 2 O 3 on Al 2 O 3 (0001) and GaN (0001) Substrates

Aldo Ugolotti, Leo Miglio, Piero Mazzolini, R. Fornari et al.
1 citations
ACS Applied Materials & Interfaces
Ga2O3 and related materials
0.43
article

Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga 2 O 3 on Al 2 O 3 (0001) and GaN (0001) Substrates

Aldo Ugolotti, Leo Miglio, Piero Mazzolini, R. Fornari, Francesco Mezzadri, Roberto Bergamaschini, Zs. Fogarassy, A. Ardenghi, Oliver Bierwagen, Ildikó Cora, B. Pécz, Stefano Leone, L. Seravalli, Matteo Bosi, Ludovico Cademartiri, Ilaria Bertoni, L. Nasi
article en
1 citations

Abstract

We present an analysis of the phase stabilization of β-Ga<sub>2</sub>O<sub>3</sub> and κ-Ga<sub>2</sub>O<sub>3</sub> grown by metal-organic vapor-phase epitaxy with varying supersaturation of the gas-phase precursors on c-sapphire and GaN substrates. We compare in-depth structural analyses of the bulk and interface layers, also through the measurement of strain relaxation across the structure, with a comprehensive nucleation model, based on multiscale simulations. A coherent and quantitative interpretation of different stages of the nucleation of Ga<sub>2</sub>O<sub>3</sub> phases on sapphire is elaborated on, highlighting the crucial role of the supersaturation of gas precursors and of the residual misfit strain within the initial layers in the stabilization of competing Ga<sub>2</sub>O<sub>3</sub> polymorphs.

ACS Applied Materials & InterfacesVol. 17(45)
University of Parma (IT), Fraunhofer Institute for Applied Solid State Physics (DE), Sustainability Institute (ZA), Institute of Materials for Electronics and Magnetism (IT), Forschungsverbund Berlin (DE), HUN-REN Centre for Energy Research (HU), University of Milano-Bicocca (IT)
Openalex Percentile: Top 35%
Ga2O3 and related materials
0.43
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