DFT-guided additive design for BaTiO <sub>3</sub> -based MLCCs exhibiting excellent insulation reliability
Oxygen vacancies (V<sub>O</sub>s) degrade the insulation reliability of BaTiO<sub>3</sub>-based multilayer ceramic capacitors (MLCCs). Density functional theory calculations reveal that Ce doped at the B-sites (Ce<sub>Ti</sub>) of BaTiO<sub>3</sub> strongly stabilizes V<sub>O</sub>s, effectively suppressing V<sub>O</sub> migration. This stabilization originates from electron trapping by Ce<sub>Ti</sub>, which reduces Ce<sup>4+</sup> to Ce<sup>3+</sup> and substantially increases the involved ionic radius. The resulting size mismatch reduces the stability of Ce<sub>Ti</sub>, enabling strong interaction with adjacent V<sub>O</sub>s. In co-doped BaTiO<sub>3</sub>, Ce-Er combination effectively traps V<sub>O</sub>s by promoting electron trapping at Ce. Meanwhile, Ce-Mn co-doping leads to preferential electron trapping by Mn, resulting in slightly lower V<sub>O</sub> stabilization. To explain variations in electron trapping, we propose a descriptor based on trap-state characteristics, enabling prediction of the preferred trapping site. Overall, these findings provide atomic-scale insights for designing additives that enhance the insulation reliability of MLCCs.
Authors
- Kang-Sahn Kim
- Juhun Park (ORCID: https://orcid.org/0009-0001-7553-3069)
- Giwoong Ha
- Sung‐Hoon Kim (ORCID: https://orcid.org/0000-0002-1570-3230)
- Hye-Ri Hong (ORCID: https://orcid.org/0000-0002-1786-1320)
- Gi Joo Bang (ORCID: https://orcid.org/0009-0004-9893-7041)
Institutions
- Samsung (South Korea) (KR)
Publication Details
- Journal
- Chemical Communications
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5cc04920b
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73