DFT-guided additive design for BaTiO <sub>3</sub> -based MLCCs exhibiting excellent insulation reliability

Oxygen vacancies (V<sub>O</sub>s) degrade the insulation reliability of BaTiO<sub>3</sub>-based multilayer ceramic capacitors (MLCCs). Density functional theory calculations reveal that Ce doped at the B-sites (Ce<sub>Ti</sub>) of BaTiO<sub>3</sub> strongly stabilizes V<sub>O</sub>s, effectively suppressing V<sub>O</sub> migration. This stabilization originates from electron trapping by Ce<sub>Ti</sub>, which reduces Ce<sup>4+</sup> to Ce<sup>3+</sup> and substantially increases the involved ionic radius. The resulting size mismatch reduces the stability of Ce<sub>Ti</sub>, enabling strong interaction with adjacent V<sub>O</sub>s. In co-doped BaTiO<sub>3</sub>, Ce-Er combination effectively traps V<sub>O</sub>s by promoting electron trapping at Ce. Meanwhile, Ce-Mn co-doping leads to preferential electron trapping by Mn, resulting in slightly lower V<sub>O</sub> stabilization. To explain variations in electron trapping, we propose a descriptor based on trap-state characteristics, enabling prediction of the preferred trapping site. Overall, these findings provide atomic-scale insights for designing additives that enhance the insulation reliability of MLCCs.

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Publication Details

Journal
Chemical Communications
Published
2025-01-01
DOI
https://doi.org/10.1039/d5cc04920b
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73
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article

DFT-guided additive design for BaTiO 3 -based MLCCs exhibiting excellent insulation reliability

Kang-Sahn Kim, Juhun Park, Giwoong Ha, Sung‐Hoon Kim et al.
1 citations
Chemical Communications
Semiconductor materials and devices
0.73
article

DFT-guided additive design for BaTiO 3 -based MLCCs exhibiting excellent insulation reliability

Kang-Sahn Kim, Juhun Park, Giwoong Ha, Sung‐Hoon Kim, Hye-Ri Hong, Gi Joo Bang
article en
1 citations

Abstract

Oxygen vacancies (V<sub>O</sub>s) degrade the insulation reliability of BaTiO<sub>3</sub>-based multilayer ceramic capacitors (MLCCs). Density functional theory calculations reveal that Ce doped at the B-sites (Ce<sub>Ti</sub>) of BaTiO<sub>3</sub> strongly stabilizes V<sub>O</sub>s, effectively suppressing V<sub>O</sub> migration. This stabilization originates from electron trapping by Ce<sub>Ti</sub>, which reduces Ce<sup>4+</sup> to Ce<sup>3+</sup> and substantially increases the involved ionic radius. The resulting size mismatch reduces the stability of Ce<sub>Ti</sub>, enabling strong interaction with adjacent V<sub>O</sub>s. In co-doped BaTiO<sub>3</sub>, Ce-Er combination effectively traps V<sub>O</sub>s by promoting electron trapping at Ce. Meanwhile, Ce-Mn co-doping leads to preferential electron trapping by Mn, resulting in slightly lower V<sub>O</sub> stabilization. To explain variations in electron trapping, we propose a descriptor based on trap-state characteristics, enabling prediction of the preferred trapping site. Overall, these findings provide atomic-scale insights for designing additives that enhance the insulation reliability of MLCCs.

Chemical CommunicationsVol. 61(95)
Samsung (South Korea) (KR)
Openalex Percentile: Top 22%
Semiconductor materials and devices
0.73
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