基于4H-SiC的p-i-n型紫外光探测器的光电特性研究

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Publication Details

Journal
Laser & Optoelectronics Progress
Published
2025-01-01
DOI
https://doi.org/10.3788/lop250660
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
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article

基于4H-SiC的p-i-n型紫外光探测器的光电特性研究

翟颖 Zhai Ying, 郭玉龙 Guo Yulong, 胡晴 Hu Qing, 张东楷 Zhang Dongkai et al.
Laser & Optoelectronics Progress
Silicon Carbide Semiconductor Technologies
article

基于4H-SiC的p-i-n型紫外光探测器的光电特性研究

翟颖 Zhai Ying, 郭玉龙 Guo Yulong, 胡晴 Hu Qing, 张东楷 Zhang Dongkai, 曾红燕 Zeng Hongyan, 于平平 Yu Pingping, 闫大为 Yan Dawei
article en

Abstract

No abstract available for this paper.
Laser & Optoelectronics ProgressVol. 62(21)
Openalex Percentile: Top 69%
Silicon Carbide Semiconductor Technologies
DOIOpen Access PDFOpenAlex
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基于4H-SiC的p-i-n型紫外光探测器的光电特性研究 — 翟颖 Zhai Ying, 郭玉龙 Guo Yulong, et al. · Laser & Optoelectronics Progress (2025) | TGRS Research Map | TGRS