Plasma-enhanced ALD growth of ε-(Al <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> ) <sub>2</sub> O <sub>3</sub> alloy films with high Al content and tunable band offsets
The low-temperature PEALD approach results in high-Al-content ε-(Al x Ga 1− x ) 2 O 3 films with high crystallinity, a tunable bandgap, and large conduction band offsets, suitable for polarization-engineered electronics.
Authors
- Qiang Miao (ORCID: https://orcid.org/0000-0002-7857-3082)
- Shi-Hui Zhang
- Jinteng Zhang
- Nan Hu (ORCID: https://orcid.org/0000-0001-8356-8571)
- Huang Rong (ORCID: https://orcid.org/0000-0002-6105-6943)
- Zhitai Jia (ORCID: https://orcid.org/0000-0002-7534-8082)
- Yecheng Ding (ORCID: https://orcid.org/0000-0002-1665-5023)
- Sunan Ding
- Yang Shen (ORCID: https://orcid.org/0009-0005-3458-4352)
- Yu Liang
- Ying Wu (ORCID: https://orcid.org/0000-0002-5458-0165)
- Zhiyun Li (ORCID: https://orcid.org/0009-0002-9149-4343)
- Xiaohong Zeng
- Zicheng Xing
Institutions
- Crystal Research (United States) (US)
- Suzhou Vocational University (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc03299g
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00