ZnSe/V <sub>2</sub> C MXene Schottky junction: mechanism of interface barrier promoting carrier directional separation and enhancing photocatalytic hydrogen evolution

ZnSe nanoparticles are grown in situ on the surface of V 2 C MXene to construct Schottky junctions. The interface barrier reduces the recombination of the carrier and improves the hydrogen production performance of the composite catalyst.

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Publication Details

Journal
Journal of Materials Chemistry A
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ta07610b
Citations
3
Primary Topic
MXene and MAX Phase Materials
Type
article
Field-Weighted Citation Impact
1.55
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article

ZnSe/V 2 C MXene Schottky junction: mechanism of interface barrier promoting carrier directional separation and enhancing photocatalytic hydrogen evolution

Zhiliang Jin, Xiaoli Ma, Ming Su
3 citations
Journal of Materials Chemistry A
MXene and MAX Phase Materials
1.55
article

ZnSe/V 2 C MXene Schottky junction: mechanism of interface barrier promoting carrier directional separation and enhancing photocatalytic hydrogen evolution

Zhiliang Jin, Xiaoli Ma, Ming Su
article en
3 citations

Abstract

ZnSe nanoparticles are grown in situ on the surface of V 2 C MXene to construct Schottky junctions. The interface barrier reduces the recombination of the carrier and improves the hydrogen production performance of the composite catalyst.

Journal of Materials Chemistry AVol. 13(47)
State Ethnic Affairs Commission (CN), North Minzu University (CN)
Openalex Percentile: Top 16%
MXene and MAX Phase Materials
1.55
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