Room-Temperature Ferroelectricity of Bi <sub>2</sub> O <sub>2</sub> Se in the Two-Dimensional Limit

Atomic-scale two-dimensional (2D) ferroelectrics are of great interest for advancing next-generation high-performance electronics. Here, we report the discovery of room-temperature (RT) ferroelectricity in ultrathin 2D Bi<sub>2</sub>O<sub>2</sub>Se (BOS) films grown by molecular beam epitaxy. These films exhibit degenerate semiconducting characteristics through a unique self-modulated doping mechanism featuring in-plane electron confinement and a high RT mobility of 311 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Remarkably, robust out-of-plane ferroelectricity persists down to the single-unit-cell limit. Through atomic-scale characterization, we reveal that the ferroelectric polarization stems from electric-field-modulated dipole ordering associated with Se atom displacements. This study confirms the ferroelectricity of ultrathin BOS films, thereby opening new avenues for the development of innovative nanoscale devices and the engineering of quantum materials.

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Publication Details

Journal
Nano Letters
Published
2025-10-30
DOI
https://doi.org/10.1021/acs.nanolett.5c04402
Primary Topic
2D Materials and Applications
Type
article
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Room-Temperature Ferroelectricity of Bi 2 O 2 Se in the Two-Dimensional Limit

Zihao Wang, Yan Liang, Runzhang Xu, Yang Guo et al.
Nano Letters
2D Materials and Applications
article

Room-Temperature Ferroelectricity of Bi 2 O 2 Se in the Two-Dimensional Limit

Zihao Wang, Yan Liang, Runzhang Xu, Yang Guo, Kai Hu, Dingyi Li, F. Jabeen, Jiandong Guo, Chengkai Li, Z. G. Yin, Wei Li, Pan Chen, Wei Zhang, Fang Yang, Jiandi Zhang, Zixin Fan, Lingyuan Kong, Haoming Ling, Shih-Peng Tai
article en

Abstract

Atomic-scale two-dimensional (2D) ferroelectrics are of great interest for advancing next-generation high-performance electronics. Here, we report the discovery of room-temperature (RT) ferroelectricity in ultrathin 2D Bi<sub>2</sub>O<sub>2</sub>Se (BOS) films grown by molecular beam epitaxy. These films exhibit degenerate semiconducting characteristics through a unique self-modulated doping mechanism featuring in-plane electron confinement and a high RT mobility of 311 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Remarkably, robust out-of-plane ferroelectricity persists down to the single-unit-cell limit. Through atomic-scale characterization, we reveal that the ferroelectric polarization stems from electric-field-modulated dipole ordering associated with Se atom displacements. This study confirms the ferroelectricity of ultrathin BOS films, thereby opening new avenues for the development of innovative nanoscale devices and the engineering of quantum materials.

Nano LettersVol. 25(51)
Chinese Academy of Sciences (CN), Hong Kong University of Science and Technology (HK), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Institute of Physics (CN), National Laboratory for Superconductivity (CN), University of Chinese Academy of Sciences (CN), Hebei University (CN)
Openalex Percentile: Top 75%
2D Materials and Applications
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