Electronic structure of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi mathvariant="normal">Bi</mml:mi> <mml:mn>2</mml:mn> </mml:msub> <mml:msub> <mml:mi mathvariant="normal">Te</mml:mi> <mml:mn>3</mml:mn> </mml:msub
The authors successfully prepare here a high-quality side surface of the layered topological insulator Bi_{2}Te_{3}. Using DFT calculations, they clearly demonstrate the reason behind the significant anisotropy of the Dirac state and its relationship with the projection of the bulk states onto the chosen crystallographic plane. Surface spectrum calculations enable them to determine the orientation of the facets on the prepared side surface, which is found to be $(10\overline{1})$, the spectrum of which aligns perfectly with the ARPES measurements.
Authors
- N. Kumar (ORCID: https://orcid.org/0000-0002-5399-3152)
- К. А. Кох (ORCID: https://orcid.org/0000-0003-1967-9642)
- I. A. Shvets (ORCID: https://orcid.org/0000-0003-1385-2176)
- О. Е. Терещенко (ORCID: https://orcid.org/0000-0002-6157-5874)
- Sergey V. Eremeev (ORCID: https://orcid.org/0000-0002-9477-3017)
- V. A. Golyashov (ORCID: https://orcid.org/0000-0003-2482-607X)
- Andrey S. Tarasov (ORCID: https://orcid.org/0000-0002-2083-1376)
Institutions
- Institute of Strength Physics and Materials Science (RU)
- Russian Academy of Sciences (RU)
- St Petersburg University (RU)
- National Research Tomsk State University (RU)
- Boreskov Institute of Catalysis (RU)
- V.S. Sobolev Institute of Geology and Mineralogy (RU)
- Institute of Semiconductor Physics (RU)
Publication Details
- Journal
- Physical review. B./Physical review. B
- Published
- 2025-10-02
- DOI
- https://doi.org/10.1103/bd4p-zrmy
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00